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Rapid Thermal Processing for Self-Aligned Silicide Technology

Published online by Cambridge University Press:  28 February 2011

Y. H. Ku ,
S. K. Lee ,
E. Louis ,
D. K. Shih  and
D. L. Kwong
Y. H. Ku
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering,The University of Texas at Austin, Austin, Texas 78712
S. K. Lee
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering,The University of Texas at Austin, Austin, Texas 78712
E. Louis
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering,The University of Texas at Austin, Austin, Texas 78712
D. K. Shih
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering,The University of Texas at Austin, Austin, Texas 78712
D. L. Kwong
Affiliation:
Microelectronics Research Center, Department of Electrical and Computer Engineering,The University of Texas at Austin, Austin, Texas 78712
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Abstract

A self-aligned titanium silicide process which combines the use of ion-beam mixing and rapid thermal processing (RTP) has been developed for CMOS VLSI applications. Shallow silicided junctions are formed by implanting dopants into silicide layers previously formed by ion-beam mixing with Si ions and low temperature annealing, and the subsequent drive-in of the implanted ions into the Si substrate during high temperature RTP. In addition, the formation of TiN on TiSi2 is achieved simultaneously during this process as a diffusion barrier for Al metallization. Short-channel MOS transistors with SALICIDE structure have been successfully fabricated and tested. Results of the impurity diffusion in silicide layer, the impurity segregation at both silicide/Si and oxide/silicide interfaces, contact stabilit of Al/TiN/TiSi2 structure, and device characteristics will be reported. Issues related to this process and its application to submicron device fabrication are discussed and foreseeable problem areas identified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 92: Symposium B – Rapid Thermal Processing of Electronic Materials , 1987 , 155
Copyright
Copyright © Materials Research Society 1987

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References

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