Skip to main content Accessibility help

Rapid Thermal Oxidation for Passivation of Porous Silicon

  • I. BÁrsony (a1) (a2), J.G.E. Klappe (a1), É. Vázsonyi (a2), T. Lohner (a2) and M. Fried (a2)...


Chemical and mechanical stability of porous silicon layers (PSL) is the prerequisite of any active (luminescent) or passive (e.g. porous substrate) integrated applications. In this work X-ray diffraction (XRD) was used to analyze quantitatively the strain distribution obtained in different morphology PSL that were prepared on (100) p and p+Si substrates. Tetragonal lattice constant distortion can be as high as 1.4% in highly porous “as-prepared” samples. Incoherent optical heating RTO is governed by the absorption in the oxidized specimen. PSL show vertical inhomogeneity according to interpretation of spectroscopic ellipsometry (SE) data. Oxygen incorporation during RTO is controlled by specific surface (in p+ proportional, in p inversely proportional with porosity), while the developing compressive stress depends on pore size, and decreases with porosity in both morphologies.



Hide All
[1] Canham, L. T., Appl. Phys. Lett. 57, 1046 (1990).
[2] Lehman, V. and Gösele, V., Appl. Phys. Lett. 58, 856 (1991).
[3] Tischler, M. A., Collins, R. T., Stathis, J. H. and Tsang, J. C. Appl. Phys. Lett. 60, 639 (1992).
[4] Robinson, M.B., Dillon, A.C., Haynes, D.R. and George, S.M., Appl. Phys. Lett. 61, 1414 (1992).
[5] Yamada, M. and Kondo, K., Jpn. J. Appl. Phys. 31, L993 (1992).
[6] Jung, K. H., Shih, S. and Kwong, D. L. and J. Electrochem. Soc. 140, 3046 (1993).
[7] , Petrova-Koch, Muschcik, T., Kux, A., Meyer, B. K., Koch, F., and Lehman, V., Appl. Phys. Lett. 61, 943 (1992).
[8] Batstone, J.L., Tischler, M. A., Collins, R. T., Appl. Phys. Lett. 62, 2667 (1993).
[9] Vázsonyi, Éva B., Koòs, Margit, Jalsovszky, G. and Pócsik, I. J. Luminescence 57, 121 (1993).
[10] Bellet, D., Dolino, G., Ligeon, M., Blank, P., Kirsch, M., J. Appl. Phys. 71, 145 (1992).
[11] Shiba, Kazutoshi, Sakamoto, Kinihide, Miyazaki, Seiichi and Hirose, Masataka Jpn. J. Appl. Phys. 32,2722 (1993).
[12] Klappe, J. G. E., Fewster, P. F., J. Appl. Cryst. 27, 103 (1994).
[13] Stoney, G. G., Proc. Royal Soc., London A82, 172 (1909).

Rapid Thermal Oxidation for Passivation of Porous Silicon

  • I. BÁrsony (a1) (a2), J.G.E. Klappe (a1), É. Vázsonyi (a2), T. Lohner (a2) and M. Fried (a2)...


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed