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Rapid Thermal Annealing of Si-Implanted GaAs for Power FETs

Published online by Cambridge University Press:  25 February 2011

H. Kanber ,
R. J. Cipolli  and
J. M. Whelan
H. Kanber
Affiliation:
Torrance Research Center, Hughes Aircraft Company, Torrance, CA 90509
R. J. Cipolli
Affiliation:
Torrance Research Center, Hughes Aircraft Company, Torrance, CA 90509
J. M. Whelan
Affiliation:
Materials Science Dept., University of Southern California, Los Angeles, CA 90089
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Abstract

Optimization and the advantages of rapid thermal annealing (RTA) for the electrical activation of deep 300 keV Si+ implants into GaAs are investigated and established for doses of 6 to 8×1012 cm−2. These implant conditions are appropriate for power FETs. Results are compared with those based on conventional controlled atmosphere capless furnace annealing (CAT).

The RTA yielded higher peak electron concentrations, high mobilities and greater uniformities in the gateless FET saturation currents. The deep implant results ontrast with those for shallower implants for low noise FETs. These differences are explained using a well-known implant damage model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 509
Copyright
Copyright © Materials Research Society 1985

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References

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