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Rapid Thermal Annealing of Double Polysilicon Bipolar Transistors
Published online by Cambridge University Press: 25 February 2011
Abstract
This paper reports on very shallow double rapid thermally diffused npn transistor junctions, emitter polysilicon sheet resistance, and titanium disilicide formation. A transistor with a 675Å base width fabricated using rapid thermal annealing is demonstrated.
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- Research Article
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- Copyright © Materials Research Society 1989
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