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Rapid Isothermal Annealing of N-Implanted 6H-SiC Layers Used for Fabrication of p-n Photodiodes

Published online by Cambridge University Press:  25 February 2011

Gerhard Pensl ,
Reinhard Helbig ,
Hong Zhang ,
Gonther Ziegler  and
Peter Lanig
Gerhard Pensl
Affiliation:
Pensl, Helbig, Zhang University of Erlangen, Institute of Applied Physics, Glückstraβe 9, D-8520 Erlangen, Federal Republic of Germany
Reinhard Helbig
Affiliation:
Pensl, Helbig, Zhang University of Erlangen, Institute of Applied Physics, Glückstraβe 9, D-8520 Erlangen, Federal Republic of Germany
Hong Zhang
Affiliation:
Pensl, Helbig, Zhang University of Erlangen, Institute of Applied Physics, Glückstraβe 9, D-8520 Erlangen, Federal Republic of Germany
Gonther Ziegler
Affiliation:
Ziegler, Lanig Siemens AG, Research Laboratories, D-8520 Erlangen, Federal Republic of Germany
Peter Lanig
Affiliation:
Ziegler, Lanig Siemens AG, Research Laboratories, D-8520 Erlangen, Federal Republic of Germany
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Abstract

Ion implantation of 14N and Rapid Isothermal Annealing (RIA) were employed to achieve n-type doping in epitaxial-grown 6H-SiC layers. The electrical properties of the implanted films were investigated by Hall effect measurements in order to optimize the annealing parameters. In comparison with standard furnace annealing (1470°C/7min), the annealing parameters for the RIA process could be considerably reduced (1050°C/4min). Based on planar technique, implanted p-n junctions were fabricated. The temperature dependence of I-V characteristics and of the quantum efficiency of photodiodes were studied. The maximum of the quantum efficiency at γ=330 nm reaches values of 35% at 400°C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 97: Symposium I – Novel Refractory Semiconductors , 1987 , 195
Copyright
Copyright © Materials Research Society 1987

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References

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