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Rapid Crystallization of Amorophous Gallium Produced by Laser Quenching

Published online by Cambridge University Press:  26 February 2011

J. Fröhlingsdorf  and
B. Stritzker
J. Fröhlingsdorf
Affiliation:
Institut für Festkörperforschung, Kernforschungsanlage Jülich, P.O. Box 19 13, D-5170 J¨lich, FRG
B. Stritzker
Affiliation:
Institut für Festkörperforschung, Kernforschungsanlage Jülich, P.O. Box 19 13, D-5170 J¨lich, FRG
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Abstract

Transient conductance measurements reveal the metastability of amorphous Gallium (a-Ga): Gallium can be amorphized for a certain “lifetime” at temperatures as high as 60 K, i.e. well above the crystallization temperature of 16 K.

For the first time the lower part of the C-shaped transition curve in a TTT-diagram can be measured for a pure metal. The results are in good agreement with undercooling behavior of liquid Ga-droplets.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 100: Symposium – A Fundamentals of Beam-Solid Interactions and Transient Thermal Processing , 1988 , 609
Copyright
Copyright © Materials Research Society 1988

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References

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