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Raman Study of SrBi2Ta2O9 Bi3TiNbO9 Thin Films

Published online by Cambridge University Press:  10 February 2011

W. Pérez
Affiliation:
Department of Physics, University of Puerto Rico, P.O. Box 23343, San Juan, P.R. 00931
E Ching-Prado
Affiliation:
Faculty of Science and Technology, Technological University of Panamä
P.S. Dobal
Affiliation:
Department of Physics, University of Puerto Rico, P.O. Box 23343, San Juan, P.R. 00931
A. Reynés-Figueroa
Affiliation:
Department of Physics, University of Puerto Rico, P.O. Box 23343, San Juan, P.R. 00931
R.S. Katiyar
Affiliation:
Department of Physics, University of Puerto Rico, P.O. Box 23343, San Juan, P.R. 00931
S. Tirumala
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
S. B. Desu
Affiliation:
Department of Materials Science and Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061-0237
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Abstract

Thin films of ferroelectric (SrBi2Ta2O9)x(Bi3TiNbO9)1−x layered structure were prepared for x = 0.0, 0.2, 0.4, 0.6, 0.8, and 1.0, by metal organic solution deposition method on Pt/TiO2/SiO2/Si substrates. The micro-Raman studies reveal that the samples are mostly homogeneous. The Raman sprectrum for the film with x = 0 shows bands around 60, 170, 232, 256, 337, 569, and 839 cm−1, which indicate Bi3TiNbO9 (BTN) formation. The prominent band around 839 cm−1, which is an A1g mode of the orthorombic symmetry, corresponds to symmetric stretching of the BO6 octahedra. The frequency of this band is found to shift significantly as SrBi2Ta2O9(SBT) material is added to the BTN compound. In this paper, the evolution of the Raman bands with the inclusion of SBT material are presented and discussed. Finally, The Raman spectra of SBT- BTN films are compared with those obtained in SBT-BTN bulk ceramics.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

1 - Smolenskii, G. A., Isupov, V. A., and Agranovskaya, A. I., Soviet Physics-Solid State, 3, 651 (1961).Google Scholar
2 - Amanuma, K., Hase, T., and Miyasaka, Y., Mat. Res. Soc. Symp. Proc., 361, 21 (1995)Google Scholar
3 - Zhang, X., Gu, P., and Desu, S. B., Phys. Stat. Sol. (a), 160, 35 (1997).Google Scholar
4 - Hisano, K. and Toda, K., Solid State Commun., 18, 585 (1976).Google Scholar
5 - Zou, G., Liu, J., Cui, Q., and Yang, H., Phys. Lett. A, 189, 257 (1994).Google Scholar
6 - Graves, P.R., Hua, G., Myhra, S., and Thompson, J. G., J. Solid State Chem., 114, 112 (1995)Google Scholar
7 - Liu, J., Zou, G., Yang, H., Cui, Q., Solid State Commun., 90, 365 (1994).Google Scholar
8 - Ching-Prado, E., Prez, W., Reynés-Figueroa, A., Katiyar, R. S., Ravichandran, D., and Bhalla, A. S., Mat. Res. Soc. Symp. Proc., 459, 213 (1997).Google Scholar
9 - Ching-Prado, E., Perez, W., Reynés-Figueroa, A., Katiyar, R. S., Ravichandran, D., and Bhalla, A. S., Mat. Res. Soc. Symp. Proc., 474, 49 (1997).Google Scholar
10 - Kojima, S., Imaizumi, R., Hamazaki, S., and Takashige, M., Jpn. J. Appl. Phys., 33, 5559 (1994).Google Scholar
11 - Liu, Ran, Private Communication.Google Scholar