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Raman Spectroscopy of Group IV Nanostructured Semiconductors: Influence of Size and Temperature

  • Alfredo Torres (a1), Oscar Martínez (a2), Carmelo Prieto (a3), Juan Jimenez (a4), Andrés Rodríguez (a5), Jesús Sangrador (a6) and Tomás Rodríguez (a7)...

Abstract

Group IV nanostructures have attracted a great deal of attention because of their potential applications in optoelectronics and nanodevices. Raman spectroscopy has been extensively used to characterize nanostructures since it provides non destructive information about their size, by the adequate modeling of the phonon confinement effect. However, the Raman spectrum is also sensitive to other factors, as stress and temperature, which can mix with the size effects borrowing the interpretation of the Raman spectrum. We present herein an analysis of the Raman spectra obtained for Si nanowires; the influence of the excitation conditions and the heat dissipation media are discussed in order to optimize the experimental conditions for reliable spectra acquisition and interpretation.

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Keywords

Raman Spectroscopy of Group IV Nanostructured Semiconductors: Influence of Size and Temperature

  • Alfredo Torres (a1), Oscar Martínez (a2), Carmelo Prieto (a3), Juan Jimenez (a4), Andrés Rodríguez (a5), Jesús Sangrador (a6) and Tomás Rodríguez (a7)...

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