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Raman Spectroscopy of a.SiGe:H Alloys

Published online by Cambridge University Press:  25 February 2011

L. Yang ,
J. Newton  and
B. Fieselmann
L. Yang
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940USA
J. Newton
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940USA
B. Fieselmann
Affiliation:
Solarex Corporation, Thin Film Division, 826 Newtown-Yardley Road, Newtown, PA 18940USA
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Abstract

Raman spectroscopy is used to characterize the microscopic bonding structure of a-SiGe:H alloys. Excess Ge-Ge bonding over what is predicted for random alloys is observed. Correlation between the degree of Ge-Ge clustering and the transport properties of the alloys is demonstrated. Implications of the experimental findings regarding improvement in the quality of the alloy material are discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 149: Symposium E – Amorphous Silicon Technology - 1989 , 1989 , 497
Copyright
Copyright © Materials Research Society 1989

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References

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