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Raman Scattering Study of Interface Reactions of Co/SiGe

  • Hong Ying (a1), Zhihai Wang (a1), D. B. Aldrich (a1), D. E. Sayers (a1) and R. J. Nemanich (a1)...

Abstract

Raman scattering measurements are used to characterize Co/Si, Co/Ge and CO/Si0.8Ge0.2 thin film reactions. For Co/Si samples, the phase transitions Co--CoSi--CoSi2 are identified by Raman spectroscopy. For Co/Ge samples, Raman features associated with Co5Ge 7 and CoGe2 phases were observed. For CO/Si0.8Ge0.2 samples, only CoSi was identified along with Ge enriched SiGe alloy peaks. No features associated with CoGe or Co(SiGe) were found.

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