Skip to main content Accessibility help
×
Home

Raman Scattering Spectrum Along a Bevel Etched GaAs on Si, Tem Study and GaAs P-I-N Photodetector on Si

  • Y.H. Lo (a1), M.-N. Charasse (a1), H. Lee (a1), D. Vakhshoori (a1), Y. Huang (a1), Peter Yu (a1), Z. Liliental-Weber (a2), M. Werner (a2) and S. Wang (a3)...

Abstract

Raman scattering is measured along a bevel etched GaAs epitaxial film grown on Si by molecular beam epitaxial (MBE). From the correlation length profile of Raman scatteringmost dislocation lines are confined in the 2000Å regions close to the interface. The strain profile calculated from the Raman peak shift shows that about 0.6% compressive strain exists near the interface because of lattice mismatch. However, as one moves away from the interface, the compressive strain is gradually counterbalanced by thermal expansion. Transmission electron microscope (TEM) studies of the local dislocation image and properties show that an ultra clean Si surface is essential for dislocation confinement. From high resolution TEM, we find that the distance between dislocations at the interface is nonuniform, varying from 50Å to 125Å with an average distance at 81Å. Finally, a GaAs p-i-n photodetector on Si substrate is fabricated. Even though a normal photoresponse curve is obtained, the high dark current (50nA) and relatively low responsivity (0.01A/W) show that the material quality needs to be further improved to make a minority carrier vertical transition device.

Copyright

References

Hide All
[1] Choi, H. K., Tsaur, B.-Y., Metze, G. M., Turner, G. W., and Fan, J. C. C., IEEE Electron Device Lett. EDL–5, 207 (1984).
[2] Fischer, R., Chand, N., Kopp, W., Peng, C. K., and Morkoc, H., IEEE Trans. Electron Devices, ED–33, 206 (1986).
[3] Fischer, R., Chand, N., Kopp, W., and Morkoc, H., Appl. Phys. Lett. 47, 397 (1985).
[4] van der Ziel, J. P., Dupuis, R. D., and Bean, J. C., Appl. Phys. Lett. 48, 1713 (1986).
[5] Fischer, R., Morkoc, H., Neumann, D. A., Zabel, H., Choi, C., Otsuka, N., Loqngerbo, M., and Erickson, L. P., J. Appl. Phys. 60, 1640 (1986).
[6] Richter, H., Wang, Z. P., and Ley, L., Solid State Commun. 39, 625 (1981).
[7] Shen, H. and Pollak, F. H., Appl. Phys. Lett. 45, 692 (1984).
[8] Tiong, K. K., Amirtharaj, P. M., Pollak, F. H., and Aspesns, D. E., Appl. Phys. Lett. 44, 122 (1984).
[9] Windhorn, T. H., Metze, G. M., Tsaur, B. Y., and Fan, J. C. C., Appl. Phys. Lett. 45, 309 (1984).
[10] van der Ziel, J. P., Dupuis, R. D., Logan, R. A., Mikulyak, R. M., Pinzone, C. J., and Savage, A., Appl. Phys. Lett. 50, 454 (1987).

Raman Scattering Spectrum Along a Bevel Etched GaAs on Si, Tem Study and GaAs P-I-N Photodetector on Si

  • Y.H. Lo (a1), M.-N. Charasse (a1), H. Lee (a1), D. Vakhshoori (a1), Y. Huang (a1), Peter Yu (a1), Z. Liliental-Weber (a2), M. Werner (a2) and S. Wang (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed