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Raman Scattering Characterization of GaAs-AlAs Superlattices Grown Along the [110] Direction

Published online by Cambridge University Press:  26 February 2011

D. Kirillov  and
Yi-Ching Pao
D. Kirillov
Affiliation:
Varian Research Center, 611 Hansen Way, Palo Alto, CA 94303
Yi-Ching Pao
Affiliation:
Varian III-V Device Center, 3251 Olcott Street, Santa Clara, CA 95050
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Abstract

Raman spectra of the GaAs-AlAs superlattice grown by molecular beam epi-taxy along the [110] direction were studied for the first time. The spectra were compared with spectra of the [100] superlattice and differences due to different crystallographic structure were analyzed. It was found that the energies of folded acoustical modes are higher in the [110] superlattice due to higher sound velocity in the [110] direction. Confined transverse optical phonons were a dominant feature of the spectrum of the [110] superlattice which allowed observation of the folding of transverse optical phonons. Stronger intensity of interface modes and lower intensity of folded acousti-cal modes in the [110] superlattice indicated that the quality of the layer interfaces was worse than in the [100] superlattice.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 102 , 1987 , 169
Copyright
Copyright © Materials Research Society 1988

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References

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