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Raman Scattering and Photoluminescence of Spontaneously Ordered Ga0.5In0.5P Alloy

Published online by Cambridge University Press:  15 February 2011

G. H. Li ,
Z. X. Liu ,
H. X. Han ,
Z. P. Wang ,
J. R. Dong  and
Z. G. Wang
G. H. Li
Affiliation:
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
Z. X. Liu
Affiliation:
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
H. X. Han
Affiliation:
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
Z. P. Wang
Affiliation:
National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
J. R. Dong
Affiliation:
Laboratory for Material Scientific, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Z. G. Wang
Affiliation:
Laboratory for Material Scientific, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
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Abstract

Samples of the spontaneously ordered Ga0.5In0.5P alloys were grown by the MOCVD method on [001]-oriented GaAs substrates. The thickness of the epitaxal layer is about 2 μm. Raman scattering and photoluminescence spectra have been measured at room temperature. The result from photoluminescence measurement indicates that the direct-band gaps of the spontaneously ordered samples are lower than that of the disordered sample. Three scattering peaks have been observed in the Raman spectra, corresponding to the GaP-like LO, InP-like LO and InP-like TO modes in the alloys, respectively. The frequencies of the GaP- and InP-like LO modes increase with the decrease of the band-gap of the ordered alloys. It is related to the formation of the (GaP)1/(InP)1 monolayer superlattice along [111] direction in the ordered alloys. The polarization properties of the ordered alloys are similar to those of the bulk III-V semiconductors with the zinc-blende structure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 287
Copyright
Copyright © Materials Research Society 1997

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