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Raman and Rutherford Backscattering Characterization of Ti-implanted Si above the Mott Limit

  • Javier Olea Ariza (a1), David Pastor (a2), Ignacio Mártil (a3), Germán González-Díaz (a4), Jordi Ibáñez (a5), Ramón Cuscó (a6) and Luis Artús (a7)...

Abstract

We have analyzed the degree of crystalline lattice recovery in samples implanted with Ti concentrations well above the Mott limit and subsequently Pulsed-Laser Melting (PLM) annealed by means of Raman spectroscopy and Rutherford Backscattering Spectroscopy (RBS). Since very recently, theoretical studies predicted Ti interstitial sites for the Intermediate Band (IB) formation, the knowledge of the Ti impurity lattice location after PLM annealing is an essential point that can be elucidated by means of RBS measurements. After PLM annealings, Raman and RBS measurements have shown a decrease in the lattice crystalline quality as implanted dose is increased, yielding a significantly improvement of the lattice quality at the highest energy density studied. The RBS channeling spectra show that after PLM annealings Ti impurities are mostly occupying interstitial lattice sites.

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Keywords

Raman and Rutherford Backscattering Characterization of Ti-implanted Si above the Mott Limit

  • Javier Olea Ariza (a1), David Pastor (a2), Ignacio Mártil (a3), Germán González-Díaz (a4), Jordi Ibáñez (a5), Ramón Cuscó (a6) and Luis Artús (a7)...

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