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Radiation-Induced Defects in Electron and Proton Irradiated ZnS

Published online by Cambridge University Press:  15 February 2011

S. Brunner ,
W. Puff ,
P. Mascher  and
A.G. Balogh
S. Brunner
Affiliation:
Institut für Technische Physik, Technische Universität Graz, A-8010 Graz, Austria
W. Puff
Affiliation:
Institut für Technische Physik, Technische Universität Graz, A-8010 Graz, Austria
P. Mascher
Affiliation:
Centre for Electrophotonic Materials and Devices, Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada
A.G. Balogh
Affiliation:
Department of Materials Science, Technische Hochschule Darmstadt, Darmstadt, Germany
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Abstract

In this contribution, we present a study aimed at investigating the microstructural changes of ZnS single crystals and CVD (chemical vapour deposition) grown crystals after electron and proton irradiation. Positron lifetime and Doppler-broadening measurements were performed to investigate the stability of the radiation induced defects and possible clustering mechanisms during isochronal annealing. After electron as well as proton irradiation the significant changes in the annihilation characteristics are indications of radiation induced open-volume-type defects. It is found that electron and proton irradiation causes different changes in the positron annihilation characteristics. After electron irradiation a significant defect component is observed which can be attributed to the annihilation in monovacancies. During isochronal annealing agglomerations to divacancy-type defects take place. Proton irradiation reveals a significantly different defect structure. Isochronal annealing causes agglomerations to larger defect complexes. The observed annealing stages are indications of the annealing of variously sized vacancy complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 540: Symposium N / Microstructural Processes in Irradiated Materials , 1998 , 213
Copyright
Copyright © Materials Research Society 1999

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