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Radiation hard amorphous silicon particle sensors

  • N. Wyrsch (a1), C. Miazza (a1), S. Dunand (a1), C. Ballif (a1), A. Shah (a1), M. Despeisse (a2), D. Moraes (a2) and P. Jarron (a2)...

Abstract

Radiation tests of 32 μm thick hydrogenated amorphous silicon n-i-p diodes have been performed using a high energy 24 GeV proton beam up to fluences in excess of 1016 protons/cm2. The results are compared to irradiation of similar 1 μm and 32 μm thick n-i-p diodes using a proton beam of 280 keV at a fluence of 3x1013 protons/cm2. Even though both types of irradiation cause a significant drop in photoconductivity of thin or thick diodes, all samples survived the experiment and recover almost fully after a subsequent thermal annealing.

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Radiation hard amorphous silicon particle sensors

  • N. Wyrsch (a1), C. Miazza (a1), S. Dunand (a1), C. Ballif (a1), A. Shah (a1), M. Despeisse (a2), D. Moraes (a2) and P. Jarron (a2)...

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