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Radiation Defects in SiC - Electron Irradiation With Different Energies

  • D. Volm (a1), B. K. Meyer (a1), E. N. Mokhov (a1) and P. G. Baranov (a1)

Abstract

Radiation defects in 6H SiC introduced by electron irradiation at energies of 400 keV and 1 MeV are studied by low-temperature photoluminescence and Zeeman spectroscopy. We observe a new two line spectrum at 2.547 and 2.528 eV which dominates in the spectrum of the sample irradiated at 400 keV. For 1 MeV irradiation numerous recombination lines are observable and also the well known D1 center lines appear. Annealing the sample at 1100 °C leads to the disappearance of almost all lines but the D1 lines are still present.

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