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Radiation Damage of Amorphous and Microcrystalline Silicon Image Sensor Structure

Published online by Cambridge University Press:  10 February 2011

A. Kolodziej  and
P. Krewniak
A. Kolodziej
Affiliation:
Department of Electronics, University of Mining and Metallurgy, al. Mickiewicza 30, 30-059 Krakow, Poland, kolodzie@uci.agh.edu.pl
P. Krewniak
Affiliation:
Department of Electronics, University of Mining and Metallurgy, al. Mickiewicza 30, 30-059 Krakow, Poland, kolodzie@uci.agh.edu.pl
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Abstract

The paper reports radiation damage experiments which influence properties of image sensors using pin photodiodes and thin film transistors. The effect of 60Co radiation at about 1.2MeV on the noise and drain-source current characteristics of hydrogenated amorphous and nanocrystalline silicon film transistor was examined as a function of the γ dose and hydrogen content of the films.

An unmeasurable effect upon the noise characteristics of the TFT was observed. The predominant drain-source current with increasing dose was in the form of various shifts of the transfer characteristics toward negative gate voltage and decrease of the transfer characteristic subthreshold slope from 5at% to 26at% of hydrogen content in the films. These, in turn, resulted in a large increase in leakage current for gate voltages at the periods the TFTs were not conducting. The radiation damage of the pin diode has much less influence on operation of array than the damage of the TFT.

Annealing for 3h at 180°C restored TFT threshold voltage properties, particularly in the case of amorphous films with greater contents of hydrogen.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 487: Symposium I – Semiconductors for Room-Temperature Radiation II , 1997 , 381
Copyright
Copyright © Materials Research Society 1998

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