Hostname: page-component-7c8c6479df-7qhmt Total loading time: 0 Render date: 2024-03-28T17:11:24.747Z Has data issue: false hasContentIssue false

Quasicrystal Formation in a Zr-based Bulk Metallic Glass

Published online by Cambridge University Press:  01 February 2011

L. Liu
Affiliation:
Department of Industrial & Systems Engineering, The Hong Kong Polytechnic University, Hong Kong The State Key Lab of Die & Mould Technology, Huazhong University of Science and Technology, China
K. C. Chan
Affiliation:
Department of Industrial & Systems Engineering, The Hong Kong Polytechnic University, Hong Kong
G. K. H. Pang
Affiliation:
Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong
Get access

Abstract

Zr65Ni10Cu7.5Al7.5Ag10 bulk metallic glass with a diameter of 2 mm and a length of 50 mm was prepared by copper-mould casting. The metallic glass obtained follows two-step crystallization reactions with the initial formation of metastable quasicrystals from amorphous phase, followed by the formation of a stable intermetallic Zr2Cu from the post-formed quasicrystals. In this paper, the microprocess of the amorphous-to-quasicrystalline transformation of Zr65Ni10Cu7.5Al7.5Ag10 bulk metallic glass was studied in detail by TEM and high resolution TEM coupled with nanobeam EDX. It was found that the amorphous-to-quasicrystalline transformation in the present system does not follow the traditional nucleation/growth mechanism. Instead, it undergoes a series of inter-processes and follows the sequence of phase transformation of amorphous → FCC Zr2Ni → Tetragonal Zr2Ni → Quasicrystals. Nanobeam EDX revealed that atomic diffusion was involved in all inter-processes of the phase transformations, suggesting that the amorphous-to-quasicrystalline transformation in the present bulk metallic glass is a non-polymorphous reaction.

Type
Research Article
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Koster, U., Meinhardt, J., Roos, S., Liebertz, H., Appl. Phys, Lett. 69, 179(1996)Google Scholar
2. Xing, L.Q., Eckert, J., Loser, W., Schultz, L., Appl. Phys. Lett. 73, 3220(2000)Google Scholar
3. Eckert, J., Mattern, N., Zinkevitch, M. and Seidal, M., Mater. Trans. JIM 39, 623(1999)Google Scholar
4. Murty, B.S., Ping, D. H., Hono, K., Inoue, A., Appl. Phys. Lett, 76, 55(2000)Google Scholar
5. Chen, M.W., Zhang, T., Inoue, A., Inoue, A., Sakai, A., Sakurai, T., Appl. Phys. Lett. 75, 1697(1999)Google Scholar
6. Inoue, A., Zhang, T., Saida, J., Masushita, M., Chen, M.W., Sakuri, T., Mater. Trans, JIM 40, 1137(1999)Google Scholar
7. Inoue, A., Zhang, T.,, Chen, M.W., Sakuri, T., Saida, J., Masushita, M., Appl. Phys. Lett. 76, 967(1999)Google Scholar
8. Inoue, A., Zhang, T., Chen, M.W., Sakurai, T., Saida, J., Masushita, M., J. Mater. Res. 15, 2195(2000)Google Scholar
9. Saida, J., Masushita, M., Li, C., Inoue, A., Phil. Mag. Lett. 80, 737(2000)Google Scholar
10. Saida, J., Inoue, A., J. Phys. Conden. Matt. 13, L73(2001)Google Scholar
11. Jiang, J. Z., Rasmussen, A.R., Jensen, C.H., Lin, Y., Hansen, P.L., Appl. Phys. Lett. 80, 2090(2002)Google Scholar
12. Saida, J., Masushita, M., Zhang, T., Inoue, A., Chen, M.W., Sakuri, T., Appl. Phys. Lett. 75, 3497(2002)Google Scholar
13. Liu, L., Chan, K.C., J. Alloys Compds. in press (2003)Google Scholar
14. Liu, L., Chan, K.C., Pang, G.K.H., J. Crystal Growth, submittedGoogle Scholar