Skip to main content Accessibility help
×
Home

Quantitative Studies on the Evolution of the Polysilicon/Silicon Interfacial Oxide Upon Annealing

  • Sergio A. Ajuria (a1) and Rafael Reif (a2)

Abstract

Polysilicon/silicon interfacial oxides are shown by cross-sectional Transmission Electron Microscopy studies to agglomerate upon annealing. In addition to presenting highlights of microscopy results, we report on electrical characterization data obtained from Cross-Bridge Kelvin Resistors. Resistor data not only support a model for agglomeration proven on microscopy data, but also allow for a quantitative macroscopic understanding of the agglomeration of polysilicon/silicon interfacial oxides over a wide range of times and temperatures.

Copyright

References

Hide All
[1] Graul, J., Glasl, A., Murrmann, H., IEEE J. Solid-State Circuits, SC–11, 491495 (1976).
[2] Ning, T.H., Isaac, R.D., IEEE Trans. Electron Devices, ED–S7, 2051 (1980).
[3] Potyraj, P.A., Chen, D-L, Hatalis, M.K., Greve, D.W., IEEE Trans. Electron Devices, ED–35(8), 13341343 (1988).
[4] Crabbe, E.F., Hoyt, J.L., Pease, R.F.W., Gibbons, J.F., Materials Research Society Symposium Proceedings, V. 106, 247 (1988).
[5] Bravman, J.C., Patton, G.L., Plummer, J.D., J. Appl. Phys., 57(8), 27792782 (1985).
[6] Wolstenholme, G., Jorgensen, J., Ashburn, P., Booker, G.R., J. Appl. Phys., 61, 225233 (1986).
[7] Albu-Yaron, A., Barry, J.C., Booker, G.R., Proc. 8th European Congress on Electron Microscopy 1, Csanady, A., ed. (Budapest, Hungary), 521 (1984).
[8] Ajuria, S.A., Reif, R., To appear in J. Appl. Phys., January 1991.
[9] Loh, W.M., Swirhun, S.E., Crabbe, E., Saraswat, K.C., Swanson, R.M., Elec. Dev. Let., 6(9), 441 (1985).
[10] Crabbe, E., Swirhun, S., del Alamo, J., Pease, R.F.W., Swanson, R.M., IEEE Int. Electron Devices Meeting, 28–31 (1986).
[11] Patton, G.L., Bravman, J.C., Plummer, J.D., IEEE Trans. Electron Devices, ED–SS(11), 17541768 (1986).
[12] Chor, E.F., Ashburn, P., Brunnschweiler, A., IEEE Electron Device Letters, EDL–6, 516518 (1985).
[13] Brandon, R.H., Bradshaw, F.J., R.A.E. (Farnborough) Rep. 66095 (1966).
[14] Srolovitz, D.J., Safran, S.A., J. Appl. Phys., 60, 255 (1986).
[15] Jiran, E., PhD Thesis, Dept. of Materials Science and Engineering, Massachusetts Institute of Technology, 1990.
[16] Johnson, W.A., Mehl, R.F., Trans. AIME, 135, 416 (1939).
[17] Avrami, M., J. Chem. Phys., 7, 1103 (1939).

Quantitative Studies on the Evolution of the Polysilicon/Silicon Interfacial Oxide Upon Annealing

  • Sergio A. Ajuria (a1) and Rafael Reif (a2)

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed