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A Quantitative Model for the Metastable Defect Creation in Amorphous Semiconductors by Kev-Electron Irradiation

  • A. Scholz (a1), B. Schröder (a1) and H. Oechsner (a1)

Abstract

The interaction mechanisms of keV-electrons with the hydrogenated Amorphous semiconductor are briefly discussed and the differences to the metastable defect creation by photons are set out. Based on the knowlegde of the energy dissipation mechanisms of keV-electrons in the hydrogenated Amorphous semiconductor, a model for the creation of metastable defects by keV-electron irradiation is developed and its quantitative agreement with the experimental results is shown.

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  • ISSN: -
  • EISSN: 1946-4274
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