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Quantitative Measurement of Interstitial Flux and Surface Super-saturation during Oxidation of Silicon

Published online by Cambridge University Press:  17 March 2011

M. S. Carroll  and
J. C. Sturm
M. S. Carroll
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
J. C. Sturm
Affiliation:
Department of Electrical Engineering, Princeton University, Princeton, NJ 08544
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Abstract

During the oxidation of silicon, interstitials are generated at the oxidizing surface and diffuse into the silicon. Boron diffusion was used to map the local interstitial super-saturation, the ratio of interstitial concentration to the equilibrium concentration of interstitials I/I*, versus depth above buried Si0.795Ge0.2C0.005 layers during oxidation. The average interstitial supersaturation at the silicon surface, extrapolated from the depth profiles, is measured as, ∼24 and ∼11.5 for 750°C and 850°C respectively. Using the measured interstitial concentration at the surface, the silicon interstitial injection into the silicon is calculated for oxidation at 750°C and 850°C. Finally, it is found that the surface boundary condition remains fixed over an interstitial injection rate ranging over 4 orders of magnitude.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B4.10
Copyright
Copyright © Materials Research Society 2000

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