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Quantitative Analysis of Chemically-Enhanced Sputtering during Ion Beam Deposition of Carbon Nitride Thin Films

Published online by Cambridge University Press:  03 September 2012

H. Hofsäss ,
C. Ronning ,
H. Feldermann  and
M. Sebastian
H. Hofsäss
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
C. Ronning
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
H. Feldermann
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
M. Sebastian
Affiliation:
Universität Konstanz, Fakultät für Physik, Postfach 5560, D-78434 Konstanz, Germany
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Abstract

The sputter losses during growth of carbon nitride thin films using mass selected ion beam deposition of C+ and N+ ions with energies between 20 eV and 500 eV are studied. Depending on the ion energy 35 – 100 % of C+ but only 3 – 35 % of N+ ions are incorporated in the films. Thus the films are always strongly nitrogen-deficient. To suppress the preferential loss of nitrogen we introduce the concept of continuously growing surface protective layers. Starting from a diamond-like carbon film as substrate, carbon nitride films are deposited using 100 eV 12C+ and 1 keV 14N+ ions, so that the growing films are always covered with a 1–2 rm thick protective layer of amorphous carbon. In this case we observe an increased nitrogen incorporation yielding to films with average film composition of C2N.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 438: Symposium A – Materials Modificaton and Synthesis by Ion Beam… , 1996 , 575
Copyright
Copyright © Materials Research Society 1997

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