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Quantification and Characterization of the Thermal Degradation of TiSi2 Using Thermal Wave Analysis

Published online by Cambridge University Press:  25 February 2011

M. G. Fernandes ,
A. R. Sitaram ,
M. L. Kottke ,
V. S. Kaushik  and
F. S. Pintchovski
M. G. Fernandes
Affiliation:
Advanced Products R&D Laboratory, Motorola Inc., 3501, Ed Bluestein Boulevard, Austin, TX 78721
A. R. Sitaram
Affiliation:
Advanced Products R&D Laboratory, Motorola Inc., 3501, Ed Bluestein Boulevard, Austin, TX 78721
M. L. Kottke
Affiliation:
Advanced Technology Center, Motorola Inc., 5005, E. McDowell Road, Phoenix, AZ 85008
V. S. Kaushik
Affiliation:
R & QA Motorola Inc., 3501, Ed Bluestein Boulevard, Austin, TX 78721.
F. S. Pintchovski
Affiliation:
Advanced Products R&D Laboratory, Motorola Inc., 3501, Ed Bluestein Boulevard, Austin, TX 78721
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Abstract

Thermal wave imaging can be used as a rapid non-destructive in-line probe to monitor defects in metals. In the study of the Ti-polysilicon system, this technique has been used to quantify the degradation of the suicide film by monitoring the formation of a second phase during BPSG annealing. The amount of second phase formed was found to vary with Ti preclean, dopant concentration and temperature of BPSG anneal on both blanket and patterned wafers. The second phase has been identified using TEM and AES to be a silicon rich phase. Digitized thermal wave images were used to obtain information regarding the size distribution of precipitates. These distributions have been correlated with resistivity changes in submicron suicide lines.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 260: Symposium C – Advanced Metallization and Processing for Semiconductor Devices and Circuits , 1992 , 213
Copyright
Copyright © Materials Research Society 1992

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References

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