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Quality of Thermally Grown Oxides in 4H-SiC over Nitrogen or Phosphorus Implanted Regions

Published online by Cambridge University Press:  21 March 2011

I. A. Khan ,
B. Um ,
M. Matin ,
M. A. Capano  and
J. A. Cooper Jr
I. A. Khan
Affiliation:
Electrical and Computer Engineering Department Purdue University, West Lafayette, IN 47906 USA
B. Um
Affiliation:
Electrical and Computer Engineering Department Purdue University, West Lafayette, IN 47906 USA
M. Matin
Affiliation:
Electrical and Computer Engineering Department Purdue University, West Lafayette, IN 47906 USA
M. A. Capano
Affiliation:
Electrical and Computer Engineering Department Purdue University, West Lafayette, IN 47906 USA
J. A. Cooper Jr
Affiliation:
Electrical and Computer Engineering Department Purdue University, West Lafayette, IN 47906 USA
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Abstract

Current SiC metal-oxide-semiconductor-field-effect-transistors (MOSFETs) have regions of the gate electrode that overlaps the source/drain contact implant. The source/drain region is electrically isolated from this gate electrode extension by the gate insulator. Typically, the gate insulator is established through a controlled thermal oxidation step. The performance of the electrical isolation between the gate electrode and the source/drain implant region is studied using MOS systems for the nitrogen and phosphorus implant species. The dielectric strength of thermal oxide grown over a phosphorus implanted region is about four times lower than a non-implanted region and about two times lower than the nitrogen implanted region for the same implant and anneal conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 640: Symposium H – Silicon Carbide-Materials, Processing, and Devices , 2000 , H5.16
Copyright
Copyright © Materials Research Society 2001

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References

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