Hostname: page-component-76fb5796d-45l2p Total loading time: 0 Render date: 2024-04-26T13:14:53.978Z Has data issue: false hasContentIssue false
  • English
  • Français

Pyroelectric Properties of Ferroelectric Thin Films: Effect of Internal Stresses

Published online by Cambridge University Press:  01 February 2011

A. Sharma ,
Z.–G. Ban  and
S. P. Alpay
A. Sharma
Affiliation:
Department of Metallurgy and Materials Engineering and Institute of Materials Science, University of Connecticut, Storrs, CT 06269
Z.–G. Ban
Affiliation:
Department of Metallurgy and Materials Engineering and Institute of Materials Science, University of Connecticut, Storrs, CT 06269
S. P. Alpay
Affiliation:
Department of Metallurgy and Materials Engineering and Institute of Materials Science, University of Connecticut, Storrs, CT 06269
Get access

Abstract

A thermodynamic model is employed to analyze the effect of internal stresses on the pyroelectric response of ferroelectric thin films. The pyroelectric coefficient as a function of the misfit strain is calculated for (001) Ba0.6Sr0.4TiO3 epitaxial thin films by taking into account formation of misfit dislocations that relieve epitaxial stresses during deposition. It is shown that the pyroelectric response is highly dependent on the misfit strain in epitaxial thin films. Enhanced pyroelectric coefficient can be achieved by adjusting the misfit strain via substrate selection and film thickness especially in the vicinity of the ferroelectric to paraelectric phase transformation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 784: Symposium C – Ferroelectric Thin Films XII , 2003 , C10.9
Copyright
Copyright © Materials Research Society 2004

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCE

1. Whatmore, R.W., Zhang, Q., Huang, Z. and Dorey, R.A., Materials Science in Semiconductor Processing 5, 65 (2003).Google Scholar
2. Kulwicki, B.M., Amin, A., Beratan, H.R. and Hanson, C.M., IEEE Proceedings on Application of Ferroelectrics 8, (1992).Google Scholar
3. Shaw, T.M., Suo, Z., Huang, M., Liniger, E., Laibowitz, R.B. and Baniecki, J.D., Appl. Phys. Lett. 75, 2129 (1999).Google Scholar
4. Li, H., Roytburd, A.L., Alpay, S.P., Tran, T.D., Salamanca-Riba, L. and Ramesh, R., Appl. Phys. Lett. 78, 2354 (2001).Google Scholar
5. Pertsev, N.A., Zembilgotov, A.G. and Tagantsev, A.K., Phys. Rev. Lett. 80, 1988 (1998).Google Scholar
6. The parameters used for the calculation of Figures 1 and 2 (in SI units, T in oC): a 1* =4.63×105(T-5)-1.90×1010 u m , a 3* =4.63×105(T-5)+1.96×1010 u m , a 1*1 =2.16T×106 +1.44×109, a 3*3 =2.16T×106 +7.95×108, a 1*2 =1.73×108 a 1*3 =1.51×108; data compiled from Ref. [7].Google Scholar
7. Ban, Z.-G. and Alpay, S.P., J. Appl. Phys. 91, 9288 (2002).Google Scholar
8. Amin, A., J. of Electroceramics 8, 99 (2002).Google Scholar
9. Ban, Z.-G. and Alpay, S.P., Appl. Phys. Lett. 82, 3499 (2003).Google Scholar
10. Matthews, J.W. and Blakeslee, A.E., J. Cryst. Growth 27, 118 (1974).Google Scholar
11. Iijima, K., Tomita, Y., Takayama, R. and Ueda, I., J. Appl. Phys. 60, 361367 (1986).Google Scholar
12. Muralt, P., Rep. Prog. Phys. 64, 1339 (2001).Google Scholar