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PVT Growth of 6H SiC Crystals and Defect Characterization

  • Govindhan Dhanaraj (a1), Feng Liu (a1), Michael Dudley (a1), Hui Zhang (a2) and Vish Prasad (a3)...

Abstract

SiC single crystals have been grown by seeded sublimation method using physical vapor transport (PVT) system designed and fabricated in our laboratory. A novel multi-segmented graphite insulation has been used for improved heat containment in the hot-zone. Numerical modeling was used to obtain the temperature field and predict various growth parameters. The grown crystals were characterized using AFM, SWBXT and chemical etching.

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PVT Growth of 6H SiC Crystals and Defect Characterization

  • Govindhan Dhanaraj (a1), Feng Liu (a1), Michael Dudley (a1), Hui Zhang (a2) and Vish Prasad (a3)...

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