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Pulsed UV Excimer Laser Doping of Semiconductors*

Published online by Cambridge University Press:  15 February 2011

T. F. Deutsch
T. F. Deutsch*
Affiliation:
Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, Massachusetts 02173
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Abstract

UV excimer lasers have been used to dope semiconductors by a one–step process in which the laser serves both to release dopant atoms from a parent molecule and to melt the surface, allowing incorporation of dopant atoms by liquid state diffusion. The technique has been used to dope Si, GaAs, and InP. Shallow junctions formed by the technique have been fabricated into efficient Si and GaAs solar cells.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 17: Symposium I – Laser Diagnostics and Photochemical Processing for Semiconductor Devices , 1982 , 225
Copyright
Copyright © Materials Research Society 1983

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Footnotes

*

This work was sponsored by the Department of the Air Force, in part under a specific program sponsored by the Air Force Office of Scientific Research, by the Defense Advanced Research Projects Agency, and by the Army Research Office.

References

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