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Pulsed Ruby Laser Annealing of Zn, Mg, Se and Si Ion Implants in Semiconducting Gaas

  • Douglas H. Lowndes (a1), J. W. Cleland (a1), W. H. Christie (a1) and R. E. Eby (a1)

Abstract

The properties of p+ and n+ layers formed by pulsed ruby laser annealing (PRLA) of shallow (Rp ~ 320–680 Å) implantations of Mg, Zn, Si and Se ions in both n- and p-type semiconducting GaAs have been evaluated using a combination of SIMS and electrical properties measurements. High activation (> 80%) was obtained for high dose (5 × 1015 ions/cm2 ) implants of both Mg and Zn, within a pulsed laser energy density “window” 0.5 ≤ Eλ ≤ 0.8 J/cm2 (FWHM pulse duration = 20–25 ns). SIMS measurements following PRLA show a wellbehaved increasing penetration of dopant ions into the GaAs substrate, with dopant ion concentrations well in excess of 1020 ions/cm3 in the near-surface region. Measured hole mobilities are consistent with the values anticipated for these high concentrations of ionized impurity scattering centers.

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1. Laser-Solid Interactions and Laser Processing – 1978 (AIP Conf. Proc. 50), Ferris, S. D., Leamy, H. J., Poate, J. M. eds. (American Inst. of Physics, New York 1979).
2. Laser and Electron Beam Processing of Materials, White, C. W., Peercy, P. S. eds. (Academic Press, New York 1980).
3. Wood, R. F., Lowndes, D. H., Christie, W. H., this Conference Proceedings (1980).
4. Cullis, A. G., Webber, H. C., Bailey, P., J. Phys. E: Sci. Instr. 12, 688 (1979).
5. Heraeus-Amersil, Sayreville, N. J.
6. White, C. W., Wilson, S. R., Appleton, B. R., Young, F. W. Jr. and Narayan, J., Ref. 2, p. 111.
7. White, C. W., Wilson, S. R., Appleton, B. R., Narayan, J., Ref. 2, p. 124; See also other papers in Part II of Ref. 2.
8. Wood, R. F., Wang, J. C., Giles, G. E., Kirkpatrick, J. R., Ref. 2, p. 37;
8a Wood, R. F., Appl.Phys. Lett. 37, 302 (1980).
9. Badawi, M. H., Sealy, B. J., Kular, S. S., Barrett, N. J., Emerson, N. G., Stephens, K. G., Booker, G. R., Hockley, M., Ref. 2, p. 354.
10. Eisen, F. H., Ref. 2, p. 309.
11. Young, R. T., Narayan, J., Westbrook, R. D., Wood, R. F., Ref. 1, p. 579, also reported approximately 80% activation for a Mg implant in GaAs.
12. Pianetta, P. A., Stolte, C. A., Hansen, J. L., Ref. 2, p. 328.
13. See, for example, the papers in Part VI of Ref. 2.
14. Sze, S. M., Irvin, J. C., Solid State Electron. 11, 599 (1968).
15. Lindhard, J., Scharff, M., Schiøtt, Kgl., H.E. Danske Videnskab Selskab. Mat. Fys. Medd. 33, No. 14 (1963).

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