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Pulsed Laser Deposition of Thin Silicon Nitride Films

  • Xiangqun Xu (a1), Kanekazu Seki (a1), Naiqun Chen (a1), Hideo Okabe (a1), Joan M. Frye (a1) and Joshua B. Halpern (a1)...

Abstract

ABSTRACTPulsed laser deposition of compressed Si3N4 powder has been used to grow thin SiNx films on a variety of substrates at substrate temperatures ranging from room temperature to 350°C. Film composition was analyzed by Auger electron spectroscopy. The SiN0.33 films have a band gap of 5.60 eV as measured by UV absorption. The FT-IR spectrum shows an absorption characteristic of Si-N. The Si/N ratio in the deposited films corresponding to various substrate temperatures has also been determined.

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Pulsed Laser Deposition of Thin Silicon Nitride Films

  • Xiangqun Xu (a1), Kanekazu Seki (a1), Naiqun Chen (a1), Hideo Okabe (a1), Joan M. Frye (a1) and Joshua B. Halpern (a1)...

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