Hostname: page-component-76fb5796d-r6qrq Total loading time: 0 Render date: 2024-04-26T11:59:24.966Z Has data issue: false hasContentIssue false
  • English
  • Français

Pulsed Laser Deposition of SrBi2Ta2O9 Thin Films for Nonvolatile Memory Applications

Published online by Cambridge University Press:  15 February 2011

S. Werner ,
D. Thomas ,
S.K. Streiffer ,
O. Auciello  and
Angus I. Kingon
S. Werner
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, N.C. 27695
D. Thomas
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, N.C. 27695
S.K. Streiffer
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, N.C. 27695
O. Auciello
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, N.C. 27695 MCNC, Electronic Technologies Division, 3021 Cornwallis Rd., Research Triangle Park, N.C. 27709-2889
Angus I. Kingon
Affiliation:
North Carolina State University, Department of Materials Science and Engineering, Raleigh, N.C. 27695
Get access

Abstract

Ferroelectric SrBi2Ta2U9 (SBT) thin films were synthesized by pulsed laser deposition (PLD) on platinized silicon substrates held at different substrate temperatures, from targets with different compositions. It was necessary to anneal films deposited at low temperature (525°C) at elevated temperatures in an oxygen atmosphere in order to achieve properties comparable to SBT thin films grown by the sol-gel technique. Polarization – electric field hysteresis loops showed saturation in the 2-5 V range with a remnant polarization 2Pr = 8-13 µC/cm2. Capacitors showed negligible fatigue up to 1010 switching cycles.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 397: Symposium B – Advanced laser Processing of Materials-Fundamentals and Applications , 1995 , 235
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Ramesh, R., Lee, J., Sands, T., Keramidas, V.G., and Auciello, O., Appl. Phys. Lett. 64, 2517 (1994).Google Scholar
2 Al-Shareef, H.N., Auciello, O., and Kingon, A.I., J. Appl. Phys. 77, 2146 (1995).Google Scholar
3 Aurivillius, Bengt, Arkiv for Kemi 1, 463 (1949).Google Scholar
4 Paz de Araujo, C.A., Cuchiaro, J.D., Scott, M.C., and McMillan, L.D., International Patent Publication No. WO 93/12542 (24 June 1993).Google Scholar
5 Amanuma, Kazushi, Hase, Takashi, and Miyasaka, Yoichi, Appl. Phys. Lett. 66, 221, (1995).Google Scholar
6 Klee, Mareike, and Mackens, Uwe, 7th International Symposium on Integrated Ferroelectrics, Colorado Springs, CO, March 20-22, (1995),Google Scholar
7 Chen, S-Y., Du, X-F., and Chen, I-W., Mat. Res. Soc. Symp. Proc. Vol. 361, 15 (1995).Google Scholar