Skip to main content Accessibility help
×
Home

Pulsed Laser Deposition of Gallium Nitride on Sapphire

  • V. Talyansky (a1), R. D. Vispute (a1), R. P. Sharma (a1), S. Choopun (a1), M. J. Downes (a1), T. Venkatesan (a1), Y. X. Li (a2), L. G. Salamanca-Riba (a2), M. C. Wood (a3), R. T. Lareau (a3) and K. A. Jones (a3)...

Abstract

We have fabricated high quality single crystalline GaN films on sapphire (0001) substrates using pulsed laser deposition. Our best GaN films on sapphire (0001) featured the FWHM of the GaN (002) peak rocking curve of 7 arcmin, the RBS minimum yield of only 3%, and the energy gap width of 3.4 eV. The effect of the deposition temperature on the crystalline quality of the films is discussed.

Copyright

References

Hide All
1. Nakamura, S., Harada, Y., and Seno, M., Appl. Phys. Lett. 58, 2021 (1991).
2. Kung, P., Saxler, A., Zhang, X., Walker, D., Wang, T. C., Ferguson, I., and Razeghi, M., Appl. Phys. Lett. 66, 2958 (1995).
2. Kim, W., Aktas, O., Botchkarev, A.E., Salvador, A., Mohammad, S.N., and Morkoc, H., J. Appl. Phys. Lett. 79, 7657 (1996).
4. Powell, R.C., Lee, N.-E., Kim, Y.-W., and Greene, J.E., J. Appl. Phys. 73, 189 (1993).
5. Yang, Z., Li, L.K., and Wang, W.I., Appl. Phys. Lett. 67, 1686 (1995).
6. Paisley, M.J., and Devis, R.F., J. Crystal growth 162, 537 (1990).
7. Morkoc, H., Strite, S., Gao, G. B., Lin, M.E., Sverdlov, B., and Burns, M., J. Appl. Phys. 76, 1363 (1994), and references therein.
8. “GaN and Related Materials for Device Applications”, Materials Research Society Bulletin, 22, 1997, and references therein.
9. Molnár, R.J., Singh, R., and Moustakas, T.D., Appl. Phys. Lett. 66, 268 (1995).
10.Pulsed laser deposition of thin films”, Eds. Chrisey, D. and Hubler, G., Wiley-Interscience, New York, 1994, and references therein.
11. Leuchtner, R. E., Block, W., Li, Y., and Hristacos, L., 1995 Fall MRS meeting
12. Xiao, R.-F., Sun, X.W., Liao, H.B., Cue, N., and Kwok, H.S., J. Appl. Phys. 80, 4226 (1996).
13. Vispute, R.D., Wu, H. and Narayan, J., Appl. Phys. Lett. 67, 1549 (1995).
14. Talyansky, V., Sharma, R. P., Choopun, S., Downes, M., Venkatesan, T., Li, Y. X., Salamanca-Riba, L. G., Wood, M. C., and Jones, K. A., submitted to J. Appl. Phys.
15. Vispute, R. D., Talyansky, V., Sharma, R. P., Choopun, S., Downes, M., Venkatesan, T., Jones, K.A., Iliadis, A. A., Khan, M. A., and Yang, J. W., accepted to Appl. Phys. Lett.
16. Qian, W., Skowronski, M., Graef, M.D., Doverspike, K., Rowland, L.B., and Gaskill, D.K., Appl. Phys. Lett. 66, 1252 (1995).

Pulsed Laser Deposition of Gallium Nitride on Sapphire

  • V. Talyansky (a1), R. D. Vispute (a1), R. P. Sharma (a1), S. Choopun (a1), M. J. Downes (a1), T. Venkatesan (a1), Y. X. Li (a2), L. G. Salamanca-Riba (a2), M. C. Wood (a3), R. T. Lareau (a3) and K. A. Jones (a3)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed