Oriented, single phase thin films (~5000Å thick) of BaxSr1-xTiO3 (BST) have been deposited on to (100) MgO and LaAlO3 (LAO) single crystal substrates using pulsed laser deposition (PLD). A strong correlation is observed between the microstructure of the deposited film and the dielectric tuning and loss at microwave frequencies. Microstructural defects observed in as deposited films include strain, due to film substrate lattice mismatch and oxygen and cation vacancies. Compensation of the ablation target with excess Ba and Sr is observed to increase the dielectric constant and to reduce the dielectric loss. Post-deposition, bomb annealing of films at high temperatures (1250°C) is observed to fill oxygen vacancies and increase grain size. The difference in the dielectric behavior for as-deposited and low temperature annealed BST films on MgO and BST films on LAO is observed and may be attributed to the differences in film stress. A further improvement in the dielectric behavior is observed by the addition of donor/acceptor dopants such as Mn. The data shows that ferroelectric thin films can be used to build tunable microwave circuits that offer significant performance advantages over devices made from conventional semiconducting materials.