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Pulsed Laser Deposition and Characterization of Zn1−xMnxO Films

Published online by Cambridge University Press:  21 March 2011

C. Jin ,
A. Tiwari ,
A. Kvit ,
D. Kumar ,
J. Muth  and
J. Narayan
C. Jin
Affiliation:
Department of Materials Science and Engineering and NSF Center for Advanced Materials and Smart Structures. North Carolina State University, Raleigh, NC 27695–7916, U.S.A.
A. Tiwari
Affiliation:
Department of Materials Science and Engineering and NSF Center for Advanced Materials and Smart Structures. North Carolina State University, Raleigh, NC 27695–7916, U.S.A.
A. Kvit
Affiliation:
Department of Materials Science and Engineering and NSF Center for Advanced Materials and Smart Structures. North Carolina State University, Raleigh, NC 27695–7916, U.S.A.
D. Kumar
Affiliation:
Department of Materials Science and Engineering and NSF Center for Advanced Materials and Smart Structures. North Carolina State University, Raleigh, NC 27695–7916, U.S.A.
J. Muth
Affiliation:
Department of Materials Science and Engineering and NSF Center for Advanced Materials and Smart Structures. North Carolina State University, Raleigh, NC 27695–7916, U.S.A.
J. Narayan
Affiliation:
Department of Materials Science and Engineering and NSF Center for Advanced Materials and Smart Structures. North Carolina State University, Raleigh, NC 27695–7916, U.S.A.
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Abstract

Here we present our results of structural, optical, and magnetic measurements of Zn1−xMnxO thin films. These films were grown epitaxially on (0001) sapphire substrates by using pulsed laser deposition technique. The maximum Mn content (x=0.36) is found to be much higher than allowed by thermal equlibrium limit (x∼0.13) due to the non-equilibrium nature of the pulsed laser deposition. All the films investigated here were found to be single phase with <0001> orientation epitaxial relationship. A linear increase in the c-axis lattice constant was observed with increase in Mn concentration. Optical transmittance measurements showed an increase in the insulating band-gap (Eg) with increase in Mn concentration. DC magnetization measurements showed that there is no long range ferromagnetic ordering down to 10 K.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H11.5.1
Copyright
Copyright © Materials Research Society 2002

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