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Pulsed Ion-Beam Induced Reactions of Ni And Co With Amorphous and Single Crystal Silicon

  • J. O. Olowolafe (a1) and R. Fastow (a1)

Abstract

Thin layers (~1,000 A ) of Ni and Co have been reacted with both (100) and amorphous silicon (a-Si) using a pulsed ion beam. Samples were analyzed using Rutherford backscattering, x-ray diffraction, and transmission electron microscopy. Rutherford backscattering showed that the metal/a-Si and metal/(100)-Si reaction rates were comparable. Both reactions began at the composition of the lowest eutectic. For comparison. furnace annealing of the same structures showed that the reaction rate of Ni with amorphous silicon was greater than with (100) Si; Co reacted nearly identically with both substrates. Diffraction data suggest that pulsed ion beam annealing crystallizes the amorphous silicon before the metal/a-Si reaction begins.

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*Department of Physics, University of lie, Ile-Ife, Nigeria

References

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Pulsed Ion-Beam Induced Reactions of Ni And Co With Amorphous and Single Crystal Silicon

  • J. O. Olowolafe (a1) and R. Fastow (a1)

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