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Pulsed Excimer Laser Processing of AlN/GaN Thin Films

  • W. S. Wong (a1), L. F. Schloss (a1), G.S. Sudhir (a1), B. P. Linder (a2), K-M. Yu (a3), E. R. Weber (a1), T. Sands (a1) and N. W. Cheung (a2)...

Abstract

A KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

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Pulsed Excimer Laser Processing of AlN/GaN Thin Films

  • W. S. Wong (a1), L. F. Schloss (a1), G.S. Sudhir (a1), B. P. Linder (a2), K-M. Yu (a3), E. R. Weber (a1), T. Sands (a1) and N. W. Cheung (a2)...

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