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A Pulsed EDMR Study of Charge Trapping at Pb Centers

Published online by Cambridge University Press:  01 February 2011

Christoph Boehme ,
Felice Friedrich  and
Klaus Lips
Christoph Boehme
Affiliation:
Hahn-Meitner-Institut Berlin, Abteilung Siliziumphotovoltaik, Kekuléstr. 5, 12489 Berlin, Germany
Felice Friedrich
Affiliation:
Hahn-Meitner-Institut Berlin, Abteilung Siliziumphotovoltaik, Kekuléstr. 5, 12489 Berlin, Germany
Klaus Lips
Affiliation:
Hahn-Meitner-Institut Berlin, Abteilung Siliziumphotovoltaik, Kekuléstr. 5, 12489 Berlin, Germany
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Abstract

Low temperature pulsed electrically detected magnetic resonance (pEDMR) measurements of charge trapping and recombination transitions involving Pb centers at the c-Si (111)/SiO2 interface are presented. The results of these experiments show that when a conduction electron is trapped, it forms a strongly coupled spin pair with the defect electron prior to its readjustment into the charged Pb ground state. The data reveals that the Landé factors of the two electrons within these pairs are almost identical (difference < 0.002) and that they are, within the measurement accuracy, identical to the Landé factor of the uncharged, singly occupied Pb center. From this, it is concluded that trapping and recombination at Pb defects is dominated by direct charge capture and not by tunneling or hopping transitions from other localized states. Different cross sections attributed in previous studies to different interface defects at the c-Si/SiO2 interface can be explained by readjustment out of different spin configurations of the charged Pb-* defect.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 864: Symposium E – Semiconductor Defect Engineering-Materials, Synthesis Structures and Devices , 2005 , E11.3
Copyright
Copyright © Materials Research Society 2005

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