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Pulsed Co2 Laser Induced Melting and Nonlinear Optical Studies of GaAs

Published online by Cambridge University Press:  26 February 2011

R. B. James ,
W. H. Christie ,
B. E. Mills  and
H. L. Burcham Jr
R. B. James
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
W. H. Christie
Affiliation:
Analytical Chemistry Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831
B. E. Mills
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
H. L. Burcham Jr
Affiliation:
Sandia National Laboratories, Livermore, CA 94550
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Abstract

We report new optical and structural properties of p-type GaAs that result from the absorption of high-intensity 10.6 μm radiation. Prior to the onset of surface melting, we find that the absorption coefficient decreases with increasing intensity in a manner predicted by an inhomogeneously broadened two-level model. As the energy density of the CO2 laser radiation is increased further, the surface topography shows signs of melting, formation of ripple patterns, and vaporization. Auger spectroscopy and electron-induced x-ray emission show that there is loss of As, compared to Ga, caused by the melting of the surface. Using plain-view TEM we find that Ga-rich islands are formed near the surface during the rapid solidification of the molten layer. Auger and SIMS measurements are used to study the incorporation of oxygen in the near-surface region, and the results show that oxygen incorporation can occur for GaAs samples that have been irradiated in air.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 161
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

1.See, for example, Lowdnes, D. H., in Pulsed Laser Processing of Semiconductors, Vol. 23, edited by Wood, R. F., White, C. W., and Young, R. T. (Academic Press, New York, 1984), p. 471.Google Scholar
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