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P-type GaN epitaxial layers and AlGaN/GaN heterostructures with high hole concentration and mobility grown by HVPE

Published online by Cambridge University Press:  01 February 2011

A. Usikov ,
O. Kovalenkov ,
V. Ivantsov ,
V. Sukhoveev ,
V. Dmitriev ,
N. Shmidt ,
D. Poloskin ,
V. Petrov  and
V. Ratnikov
A. Usikov
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, U.S.A.
O. Kovalenkov
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, U.S.A.
V. Ivantsov
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, U.S.A.
V. Sukhoveev
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, U.S.A.
V. Dmitriev
Affiliation:
Technologies and Devices International, Inc., 12214 Plum Orchard Dr., Silver Spring, MD 20904, U.S.A.
N. Shmidt
Affiliation:
A.F. Ioffe Physico-Technical Institute of Russian Academy of Science 26, Polytekhnicheskaya, 194021, St.-Petersburg, Russia.
D. Poloskin
Affiliation:
A.F. Ioffe Physico-Technical Institute of Russian Academy of Science 26, Polytekhnicheskaya, 194021, St.-Petersburg, Russia.
V. Petrov
Affiliation:
A.F. Ioffe Physico-Technical Institute of Russian Academy of Science 26, Polytekhnicheskaya, 194021, St.-Petersburg, Russia.
V. Ratnikov
Affiliation:
A.F. Ioffe Physico-Technical Institute of Russian Academy of Science 26, Polytekhnicheskaya, 194021, St.-Petersburg, Russia.
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Abstract

In this paper we report p-GaN growth by hydride vapor phase epitaxy (HVPE) on sapphire substrates. Mg or Zn impurities were used for doping. Layer thickness ranged from 2 to 5 microns. For both impurities, as-grown GaN layers had p-type conductivity. Concentration NA-ND was varied from 1016 to 1018 cm−3. An annealing procedure at 750°C in argon ambient typically increased the concentration NA-ND in 1.5–3.5 times. For Mg doped GaN layers, room temperature hole mobility of 80 cm2V−1s−1 was measured by conventional Van Der Pau Hall effect technique for material having hole concentration of about 1x1018 cm−3. Initial results on highly electrically conducting p-type AlGaN/GaN heterostructures doped with Zn are also reported.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 831: Symposium E – GaN, AlN, InN, and Their Alloys , 2004 , E8.28
Copyright
Copyright © Materials Research Society 2005

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References

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