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P-Type Doping with Arsenic in MBE-HgCdTe Using Planar Doping Approach

Published online by Cambridge University Press:  10 February 2011

F. Aqariden ,
P. S. Wijew Arnasuriya ,
S. Rujirawat  and
S. Sivananthan
F. Aqariden
Affiliation:
Microphysics Laboratory, Department of Physics (M/C 273), University of Illinois at Chicago, 845 W. Taylor St., Room #2236, Chicago, IL 60607; aqariden@uic.edu
P. S. Wijew Arnasuriya
Affiliation:
Microphysics Laboratory, Department of Physics (M/C 273), University of Illinois at Chicago, 845 W. Taylor St., Room #2236, Chicago, IL 60607; aqariden@uic.edu
S. Rujirawat
Affiliation:
Microphysics Laboratory, Department of Physics (M/C 273), University of Illinois at Chicago, 845 W. Taylor St., Room #2236, Chicago, IL 60607; aqariden@uic.edu
S. Sivananthan
Affiliation:
Microphysics Laboratory, Department of Physics (M/C 273), University of Illinois at Chicago, 845 W. Taylor St., Room #2236, Chicago, IL 60607; aqariden@uic.edu
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Abstract

The results of arsenic incorporation in HgCdTe (MCT) layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-MCT was carried out by a technique called planar doping. Arsenic was successfully incorporated during the MBE growth or after a low temperature anneal as acceptors. These results are very promising for in-situ fabrication of advanced optoelectronic devices using HgCdTe material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 450: Symposium O – Infrared Applications of Semiconductors , 1996 , 251
Copyright
Copyright © Materials Research Society 1997

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References

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