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P-Type Conversion of Nitrogen Doped ZnSe Films Grown By Mocvd

Published online by Cambridge University Press:  16 February 2011

Babar A. Khan ,
Nikhil Taskar ,
Donald Dorman  and
Khalid Shahzad
Babar A. Khan
Affiliation:
Philips Laboratories, Briarcliff Manor, NY
Nikhil Taskar
Affiliation:
Philips Laboratories, Briarcliff Manor, NY
Donald Dorman
Affiliation:
Philips Laboratories, Briarcliff Manor, NY
Khalid Shahzad
Affiliation:
Philips Laboratories, Briarcliff Manor, NY
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Abstract

We have obtained p-type zinc selenide films by nitrogen doping combined with a post growth anneal. These films were grown on <100> gallium arsenide substrates using a low-pressure MOCVD process. Ammonia gas was used as the source for nitrogen. The as-grown films were annealed and then studied by photoluminescence (PL) and capacitance-voltage (CV) techniques. The PL data is dominated by the acceptor-bound exciton peak and donor-acceptor pair spectrum associated with the nitrogen acceptor. The C-V data shows that the films are p-type, with the highest measured net acceptor concentration of 3×1016/cm3.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 222: Symposium D – Atomic Layer Growth and Processing , 1991 , 251
Copyright
Copyright © Materials Research Society 1991

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References

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