Skip to main content Accessibility help
×
Home

P-Type Conversion of Nitrogen Doped ZnSe Films Grown By Mocvd

  • Babar A. Khan (a1), Nikhil Taskar (a1), Donald Dorman (a1) and Khalid Shahzad (a1)

Abstract

We have obtained p-type zinc selenide films by nitrogen doping combined with a post growth anneal. These films were grown on <100> gallium arsenide substrates using a low-pressure MOCVD process. Ammonia gas was used as the source for nitrogen. The as-grown films were annealed and then studied by photoluminescence (PL) and capacitance-voltage (CV) techniques. The PL data is dominated by the acceptor-bound exciton peak and donor-acceptor pair spectrum associated with the nitrogen acceptor. The C-V data shows that the films are p-type, with the highest measured net acceptor concentration of 3×1016/cm 3.

Copyright

References

Hide All
1. Cheng, H., DePuydt, J.M.,. Potts, I.E. and Smith, T.L., Appl. Phys. Lett. 52, 147 (1988).
2. Park, R.M., Troffer, M.B., Rouleau, C.M., DePuydt, J.M. and Haase, M.A., Appl. Phys. Lett. 57, 2127 (1900).
3. Taike, A., Migita, M. and Yamamoto, Y., Appl. Phys. Lett. 56, 1989
4. Ohki, A., Shibata, N. and Zembutsu, S.,. Jap. J. Appl. Phys., Vol.27, #5, May 1988, L909L912.
5. Fujita, S., Tanabe, A., Sakamoto, T., Iscmura, M. and Fujita, S.,. Jap. J. Appl. Phys. 66, 1753 (1989).
6. Yoshikawa, A., Okamoto, T., Fujimoto, T., Onoue, K., Yamaga, S. and Kasai, K., Jap. J. Appl. Phys. 29, L225 (1990).
7. Marshall, T. and Cammack, D.A., J. Appl. Phys., April 1991.
8. Marshall, T., Colak, S. and Cammack, D.,. J. Appl. Phys. 66, 1753 (1989).
9. Skromme, B.J., Stoffel, N.G., Gozdz, A.S., Tamargo, M.C. and Shibli, S.M., Mat. Res. Soc. Proc. Vol.144, 391, 1989.

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed