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PtSi Contact Metallurgy by Different Formation Processes

Published online by Cambridge University Press:  26 February 2011

Chin-An Change ,
H. -C. Huang ,
A. Segmüller ,
F. E. Turene ,
B. Cunningham ,
A. Sugerman  and
P. A. Totta
Chin-An Change
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, N. Y. 12533
H. -C. Huang
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, N. Y. 12533
A. Segmüller
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, N. Y. 12533
F. E. Turene
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, N. Y. 12533
B. Cunningham
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, N. Y. 12533
A. Sugerman
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, N. Y. 12533
P. A. Totta
Affiliation:
IBM East Fishkill Facility, Hopewell Junction, N. Y. 12533
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Abstract

PtSi films have been formed using sputtered Pt and different annealing sequences and ambients. A clear dependence on the annealing sequence and ambient is observed for both the PtSi films and the passivating oxide layers formed. The single-temperature process at 550°C using forming gas (N2-H2 9:1), nitrogen and oxygen shows incomplete reactions between Pt and Si, with a surface oxide layer of poor resistance against etching in aqua regia. A three-temperature process using forming gas is shown to provide complete reactions between Pt and Si, with a surface oxide layer of excellent resistance against aqua regia. The three-temperature process using nitrogen or oxygen, however, fails to provide films of high quality, and the results are similar to those obtained by the single-temperature process in various gases.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 54: Symposium E – Thin Films–Interfaces and Phenomena , 1985 , 775
Copyright
Copyright © Materials Research Society 1986

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References

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