Hostname: page-component-8448b6f56d-gtxcr Total loading time: 0 Render date: 2024-04-23T11:30:40.468Z Has data issue: false hasContentIssue false
  • English
  • Français

Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes

Published online by Cambridge University Press:  18 December 2014

Arjun Shetty ,
Basanta Roul ,
Shruti Mukundan ,
Greeshma Chandan ,
Lokesh Mohan ,
K J Vinoy  and
S B Krupanidhi
Arjun Shetty
Affiliation:
Electrical Communication Engineering, Indian Institute of Science, Bangalore, India
Basanta Roul
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India
Shruti Mukundan
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India
Greeshma Chandan
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India
Lokesh Mohan
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India
K J Vinoy
Affiliation:
Electrical Communication Engineering, Indian Institute of Science, Bangalore, India
S B Krupanidhi
Affiliation:
Materials Research Centre, Indian Institute of Science, Bangalore, India
Get access

Abstract

Gallium nitride (n-type) films of thickness 300nm were grown on c-plane sapphire substrates using plasma assisted molecular beam epitaxy (PA-MBE). High resolution X-ray diffraction and photoluminescence measurements were used to confirm the crystalline and optical qualities of the grown films. Metal-semiconductor Schottky diodes were fabricated using Pt as the Schottky metal and Al as the Ohmic metal contact. Metal-insulator-semiconductor Schottky diodes were also fabricated using HfO2 (10nm) as the insulator material. Diode parameters like barrier height and ideality factor were extracted from I-V measurements. Introduction of HfO2 as the insulator layer leads to better rectifying behavior (forward to reverse current ratio improves from 5.1 to 8.9) with a reduction in reverse leakage current (by 7.4 times), increase in barrier height (from 0.62eV to 0.74eV) and a reduction in ideality factor (from 6 to 4.1) of the Schottky diode.

Keywords

molecular beam epitaxy (MBE)electrical propertiesnitride
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1736: Symposium T – Wide-Bandgap Materials for Solid-State Lighting and Power Electronics , 2014 , mrsf14-1736-t02-08
Copyright
Copyright © Materials Research Society 2014 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Moore, G. E., Electronics (1965)Google Scholar
Bohr, M. T., IEEE Trans. Nanotechnology, pp. 56–62 (2002)CrossRefGoogle Scholar
Oberhuber, R., Zandler, G., and Vogl, P., “Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistors” Appl. Phys. Lett. 73, 818 (1998)CrossRefGoogle Scholar
Zhang, Y. and Singh, J., “Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor” J. Appl. Phys. 85, 587 (1999)CrossRefGoogle Scholar
Foutz, B. E., Eastman, L. F., Bhapkar, U. V., and Shur, M. S., Appl. Phys. Lett. 70, 2849 (1997)CrossRefGoogle Scholar
Foutz, B. E., Eastman, L. F., Bhapkar, U. V., and Shur, M. S., Appl. Phys. Lett. 70, 2849 (1997)CrossRefGoogle Scholar
Card, H.C., Rhoderick, E.H., J. Phys. D: Appl. Phys. 4, 1589 (1971)CrossRefGoogle Scholar
Chattopadhyay, P., Daw, A.N., Solid State Electron., 29 (5) 555 (1986)CrossRefGoogle Scholar
Quennoughı, Z., Phys. Status Solidi. A 160, 127 (1997)3.0.CO;2-5>CrossRefGoogle Scholar
Singh, A., Reinhardt, K.C., Anderson, W.A., J. Appl. Phys. 68 (7) 3478 (1990)Google Scholar
Reddy, V.Rajagopal, Pratap Reddy, M.Siva, Lakshmi, B.Prasanna and Kumar, A.Ashok, Journal of Alloys and Compounds, Vol. 509, pp.8001–8007 (2011)CrossRefGoogle Scholar
Lakshmi, B. Prasanna, et al. ., Current Applied Physics 12.3:765–772 (2012)CrossRefGoogle Scholar
Cheong, K.Y., Moon, J.H., Eom, D., Kim, H.J., Bahng, W., Kim, N.-K., Electrochem. Solid State Lett. 10, H69 (2007)CrossRefGoogle Scholar
Avice, M., Grossner, U., Pintilie, I., Svensson, B.G., Servidori, M., Nipoti, R., Nilsen, O., Fjellvåg, H., Appl, J.. Phys. 102, 054513 (2007)Google Scholar
Rhoderick, E.H., Williams, R.H., Metal–Semiconductor Contacts, Clarendon, Oxford ( 1988)Google Scholar
Hudait, M.K., Krupanidhi, S.B., Solid State Electron. 44, 1089 (2000)CrossRefGoogle Scholar