Skip to main content Accessibility help
×
Home

Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes

  • Arjun Shetty (a1), Basanta Roul (a2), Shruti Mukundan (a2), Greeshma Chandan (a2), Lokesh Mohan (a2), K J Vinoy (a1) and S B Krupanidhi (a2)...

Abstract

Gallium nitride (n-type) films of thickness 300nm were grown on c-plane sapphire substrates using plasma assisted molecular beam epitaxy (PA-MBE). High resolution X-ray diffraction and photoluminescence measurements were used to confirm the crystalline and optical qualities of the grown films. Metal-semiconductor Schottky diodes were fabricated using Pt as the Schottky metal and Al as the Ohmic metal contact. Metal-insulator-semiconductor Schottky diodes were also fabricated using HfO2 (10nm) as the insulator material. Diode parameters like barrier height and ideality factor were extracted from I-V measurements. Introduction of HfO2 as the insulator layer leads to better rectifying behavior (forward to reverse current ratio improves from 5.1 to 8.9) with a reduction in reverse leakage current (by 7.4 times), increase in barrier height (from 0.62eV to 0.74eV) and a reduction in ideality factor (from 6 to 4.1) of the Schottky diode.

Copyright

References

Hide All
1. Moore, G. E., Electronics (1965)
2. Bohr, M. T., IEEE Trans. Nanotechnology, pp. 5662 (2002)
3. Oberhuber, R., Zandler, G., and Vogl, P., “Mobility of two-dimensional electrons in AlGaN/GaN modulation-doped field-effect transistorsAppl. Phys. Lett. 73, 818 (1998)
4. Zhang, Y. and Singh, J., “Charge control and mobility studies for an AlGaN/GaN high electron mobility transistorJ. Appl. Phys. 85, 587 (1999)
5. Foutz, B. E., Eastman, L. F., Bhapkar, U. V., and Shur, M. S., Appl. Phys. Lett. 70, 2849 (1997)
6. Foutz, B. E., Eastman, L. F., Bhapkar, U. V., and Shur, M. S., Appl. Phys. Lett. 70, 2849 (1997)
7. Card, H.C., Rhoderick, E.H., J. Phys. D: Appl. Phys. 4, 1589 (1971)
8. Chattopadhyay, P., Daw, A.N., Solid State Electron., 29 (5) 555 (1986)
9. Quennoughı, Z., Phys. Status Solidi. A 160, 127 (1997)
10. Singh, A., Reinhardt, K.C., Anderson, W.A., J. Appl. Phys. 68 (7) 3478 (1990)
11. Reddy, V.Rajagopal, Pratap Reddy, M.Siva, Lakshmi, B.Prasanna and Kumar, A.Ashok, Journal of Alloys and Compounds, Vol. 509, pp.80018007 (2011)
12. Lakshmi, B. Prasanna, et al. ., Current Applied Physics 12.3:765772 (2012)
13. Cheong, K.Y., Moon, J.H., Eom, D., Kim, H.J., Bahng, W., Kim, N.-K., Electrochem. Solid State Lett. 10, H69 (2007)
14. Avice, M., Grossner, U., Pintilie, I., Svensson, B.G., Servidori, M., Nipoti, R., Nilsen, O., Fjellvåg, H., Appl, J.. Phys. 102, 054513 (2007)
15. Rhoderick, E.H., Williams, R.H., Metal–Semiconductor Contacts, Clarendon, Oxford ( 1988)
16. Hudait, M.K., Krupanidhi, S.B., Solid State Electron. 44, 1089 (2000)

Keywords

Related content

Powered by UNSILO

Pt/n-GaN metal-semiconductor and Pt/HfO2/n-GaN metal-insulator-semiconductor Schottky diodes

  • Arjun Shetty (a1), Basanta Roul (a2), Shruti Mukundan (a2), Greeshma Chandan (a2), Lokesh Mohan (a2), K J Vinoy (a1) and S B Krupanidhi (a2)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed.