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Pt and Pd Silicides and Pd Germanide as Contact Metallizations for GaAs

  • E. D. Marshall (a1), C. S. Wu (a1), D. M. Scott (a1), S. S. Lau (a1) and T. F. Kuech (a2)...

Abstract

Refractory metal silicides have been shown to form stable Schottky barriers on GaAs up to an annealing temperature of ∼850°C. In this study, the metallurgical and electrical stability of near noble metal (Pd and Pt) silicide contacts to GaAs have been investigated. It is observed that Pd and Pt silicides are metallurgically more stable than Pd and Pt alone on GaAs. A correlation between the stability of silicide contacts and the heat of formation of the silicides normalized to per metal atom is found, thus allowing the prediction of contact stability of other silicides on GaAs. We have also investigated the feasibility of using solid-phase epitaxy (SPE) to grow a highly doped Ge epitaxial layer on GaAs to form a non-alloyed ohmic contact. This approach of forming a Ge/GaAs heterojunction alleviates the high vacuum requirement of MBE techniques. Our preliminary results indicate that relatively low contact resistivities can be obtained by SPE using the Ge-Sb-Pd system.

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[1] Morgan, D.V., “Interdiffusion of Metal Films on GaAs and InP”, in Reliability and Degradation Semiconductor Devices and Circuits, ed. Howes, M.J and Morgan, D.V., Wiley (1981).
[2] Yokoyama, N., Ohnishi, T., Odani, K., Onodera, H., and Abe, M., IEDM, 80 (1981).
[3] Tseng, W. F. and Christou, A., IEDM, 174 (1982).
[4] Piotrowska, A., Guivarch, A., and Pelous, G., Solid State Electronics, 26, 179(1983).
[5] Braslau, N., Thin Solid Films, 104, 391(1983).
[6] Stall, R., Wood, C. E. C., Board, K., and Eastman, L. F., Electronics Letters, 15, 800(1979).
[7] Lau, S. S., Canali, C., Liau, Z. L., Nakamura, K., Nicolet, M.-A., Blattner, R. J., and Evans, C. A. Jr., Appl. Phys. Lett., 28, 148(1976).
[8] Unpublished data, UCSD.
[9] Fontaine, C., Okumura, T., and Tu, K. N., J. Appl. Phys., 54(3), 14041412 (1983).
[10] Kumar, V., J. Phys. Chem. Solids, 36, 535(1975).
[11] Sinha, A. K., Appl. Phys. Lett., 26, 171(1975).
[12] Sinha, A. K. and Poate, J. M., Appl. Phys. Lett., 23, 666(1973).
[13] Oelhafen, P., Freeouf, J. L., Kuan, T. S., Jackson, T. N., and Batson, P. E., J. Vac. Sci. Tech., Vol. B-1, 588(1983).
[14] Olowolafe, J. O., Ho, P. S., Hovel, H. J., Lewis, J. E., and Woodall, J. M., J. Appl. Phys., 50, 955(1979).
[15] Oustry, A., Caumont, M., Escaut, A., Martinez, A., and Toprasertpong, B. Thin Solid Films, 79, 251(1981).
[16] Zeng, X. F. and Chung, D. D. L., J. Vac. Sci. Technol., 21, 611(1982).
[17] Vytatkin, A. P., Masimova, N. K., Panova, N. M., Pekarskii, E. N., Romanova, I. D., and Yakubenya, M. P., Sov. Phys. J., 24, 295(1981).
[18] Nicolet, M.-A. and Lau, S. S., “Formation and Characterization of Transition Metal Silicides“, in VLSI Electronics.: Microstructure Science, Norman Einspuch, Series Editor, Vol. 6, Materials and Process Characterization, Graydon Larrabee, Guest Editor, Academic Press (1983).
[19] Nicollian, E. H. and Sinha, A. K., “Effects of Interfacial Reactions on the Electrical Characteristics of Metal-Semiconductor Contacts”, in Thin Films-Interdiffusion and Reactions, ed. Poate, J. M., Tu, K. N., and Mayer, J. W., Wiley (1978).
[20] Tsaur, B. Y. pioneered this concept of SPE Ge/Pd/GaAs at MIT Lincoln Labs, 1983.
[21] Grinolds, H. R. and Robinson, G. Y., Solid State Electronics, 23, 973(1980).
[22] Sinha, A. K., Smith, T. E., and Levinstein, H. J., IEEE Trans. on Electron Devices, ED-22, 218(1975).
[23] Anderson, W. T. Jr., Christou, A., and Davey, J. E., IEEE J. Solid-State Circuits, SC-13, 430(1978).

Pt and Pd Silicides and Pd Germanide as Contact Metallizations for GaAs

  • E. D. Marshall (a1), C. S. Wu (a1), D. M. Scott (a1), S. S. Lau (a1) and T. F. Kuech (a2)...

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