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Properties Of Zinc Selenide Grown By Chemical Vapor Transport And Its Application To Room-Temperature Radiation Detection

Published online by Cambridge University Press:  10 February 2011

B. A. Brunett
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213;
J. E. Toney
Affiliation:
Department of Physics, Carnegie Mellon University, Pittsburgh, PA 15213;
H. Yoon
Affiliation:
Department of Materials Science and Engineering, UCLA, Los Angeles, CA;
P. Rudolph
Affiliation:
Inst fuer KrystallZuechtung, Rudower Chaussee 6, Berlin 12489, Germany
M. Schieber
Affiliation:
Sandia National Laboratories, Livermore, CA 94550;
T. E. Schlesinger
Affiliation:
Department of Electrical and Computer Engineering, Carnegie Mellon University, Pittsburgh, PA 15213;
M. S. Goorsky
Affiliation:
Department of Materials Science and Engineering, UCLA, Los Angeles, CA;
R. B. James
Affiliation:
Sandia National Laboratories, Livermore, CA 94550;
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Abstract

We have characterized ZnSe material grown by chemical vapor transport in iodine using triple-axis X-ray diffraction (TAD), photo-induced current transient spectroscopy (PICTS), photoluminescence (PL), current-voltage measurements and gamma-ray spectroscopy. The material was found to have inadequate carrier transport for nuclear spectrometer use, but there was a discernible difference in performance between crystals which could be correlated with crystallinity as determined by the TAD rocking curves.

Type
Research Article
Copyright
Copyright © Materials Research Society 1998

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References

1. Böttcher, K., Hartmann, H., J. Crystal Growth 146, p.53 (1995).Google Scholar
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3. Toney, J.E., Brunett, B.A., Schlesinger, T.E. and James, R.B., this proceedings.Google Scholar