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Properties of Vacancies in Silicon Determined by Out-Diffusion of Zinc from Silicon

Published online by Cambridge University Press:  10 February 2011

A. Giese ,
H. Bracht ,
J. T. Walton  and
N. A. Stolwijk
A. Giese
Affiliation:
Universität Münster, Institut für Metallforschung, D-48149 Münster, Germany, axel.giese@uni-muenster.de
H. Bracht
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A. University of California at Berkeley, Berkeley, CA 94720, U.S.A.
J. T. Walton
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720, U.S.A.
N. A. Stolwijk
Affiliation:
Universität Münster, Institut für Metallforschung, D-48149 Münster, Germany, axel.giese@uni-muenster.de
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Abstract

We present out-diffusion of Zn in Si as a new method to study properties of Si vacancies. Out-diffusion experiments were performed on homogeneously Zn-doped Si samples at 1107°C and 1154°C. The resulting concentration-depth profiles were measured by means of spreading-resistance profiling. Based on a diffusion model in which Zn migrates simultaneously via the kick-out and the dissociative mechanism all experimental profiles were modeled by computer simulations. The calculations reveal that out-diffusion of Zn from Si occurs to a considerable extent via the dissociative mechanism. Hence, vacancy properties like the equilibrium concentration CVeq and the transport capacity CveqDV can be extracted from profile fittings. The results are compared with literature data deduced from in-diffusion experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 532: Symposium EE – Silicon Front-End Technology - Materials Processing & Modeling , 1998 , 219
Copyright
Copyright © Materials Research Society 1998

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References

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