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Properties of Thin SiO2 Films with In-Situ Deposition of Poly Si Electrodes

Published online by Cambridge University Press:  25 February 2011

Paihung Pan ,
Ahmad Kermani ,
Wayne Berry  and
Jimmy Liao
Paihung Pan
Affiliation:
IBM General Technology Division, Essex Junction, VT 05452
Ahmad Kermani
Affiliation:
Peak Systems, Inc., Fremont, CA 94538
Wayne Berry
Affiliation:
IBM General Technology Division, Essex Junction, VT 05452
Jimmy Liao
Affiliation:
Peak Systems, Inc., Fremont, CA 94538
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Abstract

Electrical properties of thin (12 nm) SiO2 films with and without in-situ deposited poly Si electrodes have been studied. Thin SiO2 films were grown by the rapid thermal oxidation (RTO) process and the poly Si films were deposited by the rapid thermal chemical vapor deposition (RTCVD) technique at 675°C and 800°C. Good electrical properties were observed for SiO2 films with thin in-situ poly Si deposition; the flatband voltage was ∼ -0.86 V, the interface state density was < 2 × 1010/cm2/eV, and breakdown strength was > 10 MV/cm. The properties of RTCVD poly Si were also studied. The grain size was 10-60 rim before anneal and was 50-120 rim after anneal. Voids were found in thin (< 70 nm) RTCVD poly Si films. No difference in either SiO2 properties or poly Si properties was observed for poly Si films deposited at different temperatures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 146: Symposium B – Rapid Thermal Annealing/Chemical Vapor Deposition and Integrated Processing , 1989 , 47
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

1. Singh, R., J. Appl. Phys., 63, R59 (1988).Google Scholar
2. Seidel, T.E., 1988 ECS Spring Meeting, Ext. Abs. # 71, Atlanta, GA (1988)Google Scholar
3. Sturm, J.C., Gronet, C.M., King, C.A., Wilson, S.D., and Gibbons, J.F., IEEE Elect. Dev. Lett., EDL–7, 282 (1986).Google Scholar
4. Nulman, J., Krusius, J.P., and Gat, A., IEEE Elect. Dev. Lett., EDL–6, 205 (1985).CrossRefGoogle Scholar
5. Moslehi, M.M., Shatas, S.C., and Saraswat, K.C., Proc. of The Fifth Inter. Sym. on Silicon Mater. Sci., and Tech., edited by Huff, H.R. and Abe, T., The ECS, Inc., Pennington, NJ (1986).Google Scholar