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Properties of Silicon Nitride Films Prepared by Combination of Catalytic-Nitridation and Catalytic-Cvd

  • A. Izumi (a1) (a2), A. Kikkawa (a2), K. Higashimine (a2) and H. Matsumura (a2)

Abstract

This paper reports about the interface of silicon nitride (SiNx) formed on Si(100) prepared by combination of catalytic-nitridation and catalytic-vapor deposition method in a catalytic chemical vapor deposition system. It is found that flat interface of SiNx/Si(100) is formed by inserting nitridation layer before growing the SiNx films.

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[1] Matsumura, H. and Tachibana, H., Appl. Phys. Lett 47, 833 (1985).
[2] Matsumura, H., Jpn. J. Appl. Phys. 28, 2157 (1989).
[3] Okada, S. and Matsumura, H., Jpn. J. Appl. Phys. 36, 7035 (1997).
[4] Izumi, A. and Matsumura, H., Appl. Phys. Lett. 71, 1371 (1997).
[5] Izumi, A., Kikkawa, A. and Matsumura, H., Mat. Res. Soc. Symp. 715, 491 (2002).
[6] Kikkawa, A., Morimoto, R., Izumi, A. and Matsumura, H., Thin Solid Films (2003) in press.
[7] Kern, W. and Poutinen, D. A., RCA Rev. 31, 187 (1970).

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Properties of Silicon Nitride Films Prepared by Combination of Catalytic-Nitridation and Catalytic-Cvd

  • A. Izumi (a1) (a2), A. Kikkawa (a2), K. Higashimine (a2) and H. Matsumura (a2)

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