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Properties of silicon films deposited under argon dilution

  • C. Longeaud (a1), D. Roy (a1), P. Chaudhuri (a2), N. Dutta Gupta (a2), P. Pratim Ray (a2), S. Vignoli (a3), R. Meaudre (a3), M. Meaudre (a3) and L. Saviot (a4)...

Abstract

Four series of samples, prepared at 250° C by decomposition of a mixture of silane and argon in a radio frequency powered deposition systems (rf-PECVD), have been studied. The dilution rates were 1 %, 1.5 %, 5 % and 10 % of silane in argon and the total pressure was 0.5 Torr for the first series and 0.2 Torr for the others. Structural and transport properties of the materials have been studied as function of power density. Structural studies show the transition from purely amorphous material towards microcrystalline material with increasing rf power density. The transport parameters were measured in the as-deposited, light-soaked and annealed states and compared to those obtained on state of the art material. The best material obtained is clearly device grade material. This study shows that argon dilution allows to tailor the material for a given application.

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Properties of silicon films deposited under argon dilution

  • C. Longeaud (a1), D. Roy (a1), P. Chaudhuri (a2), N. Dutta Gupta (a2), P. Pratim Ray (a2), S. Vignoli (a3), R. Meaudre (a3), M. Meaudre (a3) and L. Saviot (a4)...

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