ZnO:N and ZnO:Sb layers were obtained by thermal oxidation of Zn compounds with group-V elements. The films are polycrystalline, with the acceptor concentration in the range 1020 cm-3, and the background concentration of H of 5×1019 cm-3. Transport measurements reveal the p-type conductivity with the hole concentrations exceeding 1017 cm-3. Rich photoluminescence spectra involve excitons bound to neutral acceptors and donor-to-acceptor transitions. p-ZnO:N and p-ZnO:Sb films show transparency of about 85 % in the visible wavelength range, making these materials very promising for transparent electronics.