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Properties of p-Type ZnO Grown by Oxidation of Zn-Group-V Compounds

Published online by Cambridge University Press:  01 February 2011

Eliana Kaminska ,
Ewa Przezdziecka ,
Anna Piotrowska ,
Jacek Kossut ,
Piotr Boguslawski ,
Iwona Pasternak ,
Rafal Jakiela  and
Elzbieta Dynowska
Eliana Kaminska
Affiliation:
eliana@ite.waw.pl, Institute of Electron Technology, Semiconductor processing for photonics, Al. Lotnikow 32/46, Warsaw, 02-668, Poland
Ewa Przezdziecka
Affiliation:
eilczuk@ifpan.edu.pl, Institute of Physics, PAS, Al. Lotnikow 32/46, Warsaw, 02-668, Poland
Anna Piotrowska
Affiliation:
ania@ite.waw.pl, Institute of Electron Technology, Semiconductor processing for photonics, Al. Lotnikow 32/46, Warsaw, 02-668, Poland
Jacek Kossut
Affiliation:
kossut@ifpan.edu.pl, Institute of Physics, PAS, and ERATO Semiconductor Spintronics, Al. Lotnikow 32/46, Warsaw, 02-668, Poland
Piotr Boguslawski
Affiliation:
bogus@ifpan.edu.pl, Institute of Physics, PAS, Al. Lotnikow 32/46, Warsaw, 02-668, Poland
Iwona Pasternak
Affiliation:
iwonap@ite.waw.pl, Institute of Electron Technology, Semiconductor processing for photonics, Al. Lotnikow 32/46, Warsaw, 02-668, Poland
Rafal Jakiela
Affiliation:
jakiela@ifpan.edu.pl, Institute of Physics, PAS, Al. Lotnikow 32/46, Warsaw, 02-668, Poland
Elzbieta Dynowska
Affiliation:
dynow@ifpan.edu.pl, Institute of Physics, PAS, Al. Lotnikow 32/46, Warsaw, 02-668, Poland
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Abstract

ZnO:N and ZnO:Sb layers were obtained by thermal oxidation of Zn compounds with group-V elements. The films are polycrystalline, with the acceptor concentration in the range 1020 cm-3, and the background concentration of H of 5×1019 cm-3. Transport measurements reveal the p-type conductivity with the hole concentrations exceeding 1017 cm-3. Rich photoluminescence spectra involve excitons bound to neutral acceptors and donor-to-acceptor transitions. p-ZnO:N and p-ZnO:Sb films show transparency of about 85 % in the visible wavelength range, making these materials very promising for transparent electronics.

Keywords

oxidationII-VIsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 957: Symposium K – Zinc Oxide and Related Materials , 2006 , 0957-K08-04
Copyright
Copyright © Materials Research Society 2007

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References

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